Innolume GmbH

Innolume manufacturers laser diodes in our own facilities. Please have a look at the vertically integrated III-V semiconductor factory and in-house assembly line. Here happens the magic of Quantum Dots Technology: https://lnkd.in/eedeZRxP

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Our recent breakthrough development of Ultra-wideband QD Comb Laser with 24 lines with 100GHz spacing to be presented at Post Deadline Paper session at OFC 2025 on Thursday, April 4 Innolume will present a postdeadline paper at Optical Fiber Communication Conference (OFC) 2025, currently taking place in San Francisco. This marks the third consecutive year that our work has been selected for postdeadline sessions—following the 2023 presentation on "High-performance O-band QD DFB Laser for uncooled operation", V.Mikhrin et al, and the 2024 presentation on "High-Power O-band QD Booster Amplifier for Uncooled Operation", S.Poltavtsev et al. This year's paper, titled "Ultra-Wideband, Flat-Top, 100 GHz Spacing Quantum-Dot Comb Laser for CW-WDM Data Transmission in O-Band," will be presented by Janina Rautert during Postdeadline Session IV (Th4D) on Thursday, April 3, at 5:00 PM in Room 207. The presentation will introduce a Quantum Dot-based Comb Laser featuring a flat-top spectrum with 24 lasing lines with 100 GHz spacing. According to our knowledge we doubled the number of channels with 100GHz spacing compared to previously reported QD comb lasers. This device is designed for Coarse Wavelength Division Multiplexing (CW-WDM standard), addressing the disruptively growing demand for scalable and energy-efficient data transmission solutions in next-generation AI clusters and data centers. Together with our previous post-deadline presentations at OFC 2024 and OFC 2023 the upcoming 2025 presentation highlights the broad portfolio of photonic devices developed by Innolume and underscore our leading role in advancing uncooled, high-performance QD lasers for next-generation optical interconnects. We cordially  invite you to attend the session as well as visit our booth (#4909) to learn more about our product portfolio.

High Power DFB laser AI/ML interconnects Following the keynote speech given two week ago by NVIDIA’s CEO, Jensen Huang at last GTC forum in San Francisco where he announced for the first time a coming wide deployment of Silicon Photonics based optical interconnects, a thematic workshop called “High Power and Multi-Wavelength Laser Light Sources: How Can They Address the Needs of AI/ML Interconnects?” was held on March 30 at OFC Conference. The event was dedicated to technologies that can provide efficient optical connectivity in artificial intelligence and high-performance computing, particularly in the context of optical input/output (OIO) and co-packet optics (CPO). One of the key issues addressed was the need for a reliable and scalable optical power source — one that can support multiple ports and wavelengths, deliver multi-watt output, and meet the reliability standards of the semiconductor industry. The following topics have been discussed during the workshop: ▪️ What are the key advantages and disadvantages of DFB laser/laser array based, Kerr and electro-optic comb based, mode-locked laser based, and other approaches to multi-wavelength sources, in the short and long term? ▪️ How to address the challenges of achieving higher power/multi-wavelength without compromising performance, complexity, and reliability? ▪️ Is SOA integration a viable approach to increasing power and does it justify the added noise and complexity? ▪️ Are integrated and remote light sources both viable options for OIO and CPO in terms of power, efficiency, reliability? Alexey Kovsh presented a world record power of our DFB lasers based on InAs/GaAs QDs which can operate in uncooled regime up to 100°C with PCE of 20% at 85°C, eliminating the need of TEC for External Light Source (ELS) for Co-Packaged Optics platform. This is exactly what industry needs, since till now High Power QW based DFB laser require to use TECs, leading to higher energy consumption of ELS and lower system reliability. We would like to remind you that our team will be waiting for visitors at booth #4909 during the exhibition on April 1-3, 2025 #OFC2025 #OFCConference #Innolume #DataCenterTech #AIInterconnects #DFBLasers #InAsGaAs #HighPowerLasers

Innolume at OFC 2025 Innolume is pleased to announce its participation in OFC Conference 2025, the premier global event for optical networking and communications. The exhibition will take place from April 1–3, 2025, at the Moscone Center in San Francisco, California, USA. You can find Innolume at booth #4909, where our team will be delighted to welcome you and present our latest advancements in optical semiconductor technology. At our booth, you will have the opportunity to learn about the specifications and key features of our showcased products, including: ·        Quantum Dot Semiconductor Optical Amplifier (QD SOA) – A revolutionary alternative to EDFA. ·        Uncooled 500 mW DFB Laser – High-efficiency, reliable performance for various optical applications. ·        100 GHz Comb Laser for Optical Interconnects – Enabling high-speed, multi-channel optical transmission. ·        High-temperature DFB Lasers – Deployed in cutting-edge 800G and 1.6T optical transceivers. Event Details Dates: April 1–3, 2025 Location: The Moscone Center, 747 Howard St, San Francisco, CA, USA Our Booth: #4909 We look forward to seeing you there! If you’d like to learn more, please feel free to contact us in any convenient way. See you at OFC 2025! #Innolume #OFC2025 #OpticalNetworking #SemiconductorLasers #MosconeCenter #LaserTechnology #OFCConference

Engineering Scalable Quantum Light Sources for Telecom Applications   Recently, Innolume hosted a seminar dedicated to the latest research in quantum light sources for telecommunication applications. The speaker of the event was Dr. Elizaveta Semenova, who presented the results of her work in this field. Dr. Semenova is working at DTU in Copenhagen. Her research activities include quantum dots (QDs) epitaxial growth and nanofabrication.  Key Topics of the Presentation 1. Dr. Semenova emphasized that the scalability of quantum communications is achievable through integrated photonics. The use of QDs as quantum light sources operating in the telecom C-band, enables the creation of effective solutions for global secure communication and distributed quantum computing based on the existing telecom infrastructure. 2. During the  seminar Dr. Semenova presented various epitaxial methods to grow InAs/InP quantum dots operating in the telecom C-band and their characteristics investigated via quantum optical spectroscopy methods. 3. One of the key topics of the seminar was development of deterministic fabrication process of quantum photonic devices based on single QDs operating in the telecom C-band with yield above 30%. We thank Dr. Elizaveta Semenova for her interesting and insightful presentation and continue to follow trends and developments in the field.

Which Amplifier is the Best for O-Band Data Transmission? A New Study by McGill University in collaboration with Innolume GmbH. We are happy to announce the publication of the article, “Performance and Characterization Comparison of QD SOA, QW SOA, Bulk SOA, and PDFA for Multi-Tbps O-Band WDM Links,” in the prestigious IEEE Journal of Lightwave Technology (DOI: 10.1109/JLT.2024.3509402 https://lnkd.in/g53DT5HU). This research was a collaborative effort between McGill University together with Innolume GmbH. The paper provides a comprehensive comparison of different types of semiconductor optical amplifiers (SOAs) and fiber amplifiers for use in intensity-modulation/direct-detection (IM/DD) and coherent transmission systems at the multi-terabit-per-second data rates required for next-generation optical transceivers. The performance analysis covers both single-wavelength and wavelength-division multiplexing (WDM) configurations. The findings reveal that quantum dot (QD) SOAs outperformed all other amplifiers, including PDFA, in both IM/DD and coherent transmission links. Remarkably, the Innolume QD SOA was the only amplifier capable of achieving 1.6 Tbps for coherent transmission under SD-FEC thresholds over a 10 km distance. This outstanding performance highlights the superiority of QD SOAs, driven by their high saturation output power, making them ideal for high-capacity optical networks. These results emphasize the transformative potential of QD SOAs for supporting next-generation optical networks in both IM/DD and coherent systems across single and multiple wavelengths.

Innolume Demonstrates 1 W 1.06 µm DFB Laser with Record Efficiency at SPIE Photonics West 2025 On January 27 at SPIE Photonics West 2025, Alexey Kovsh delivered a talk on cutting-edge advancements in high-power GaAs-based DFB lasers. The primary focus was on demonstrating an InGaAs quantum well-based 1.06 µm DFB laser, delivering up to 1 W of optical power with a power conversion efficiency (PCE) of 45% in continuous-wave (CW) mode for seed applications. This achievement represents a significant advancement in developing high-power and highly efficient lasers for applications such as amplifiers, holography, frequency doubling, and material processing. Key Points from the Presentation ▪️ Single Epitaxial Growth Fabrication Process: The laser structure is MBE-grown without overgrowth steps, with a corrugated grating placed near the waveguide core. ▪️ High Power and Efficiency: The 4 mm-long DFB laser achieves up to 1 W ex-facet CW power with a PCE as high as 46%. Based on our knowledge these values are world record results for GaAs based DFB lasers ▪️ Beam Quality and High coupling efficiency into single-mode fiber: A stable far-field profile with a Gaussian shape and divergence of 4x27 degrees FWHM ensures more than 70% efficient coupling into single-mode fibers across a wide range of operating conditions. This results in 300 mW CW optical power from fiber with a PCE of 35% from 3 mm-long lasers. ▪️ Narrow Linewidth: The measured optical linewidth remains below 300 kHz FWHM in wide range of output power, making these lasers ideal for applications requiring high coherence.  Quantum Dot DFB Lasers for O-Band In addition to QW-based advancements, Innolume presented its latest progress in quantum dot-based DFB lasers for the O-Band. These QD lasers deliver more than 150 mW output power across a wide temperature range from 25°C to 85°C and are designed to operate in transceivers without optical isolators. With a built-in in-situ window structure, these lasers exhibit superior reliability by preventing catastrophic optical mirror damage (COMD). Event Details: Dates: January 28–30, 2025 Location: The Moscone Center, 747 Howard St, San Francisco, CA, USA Our Booth: #4324 We invite you to visit our booth to learn more about our cutting-edge advancements in high-power DFB laser technology.

New 850nm Gain Chip for External Cavity Diode Lasers In response to high market demand, we are excited to announce the development of our latest product: a gain chip designed for external cavity laser (ECDL) applications at 850nm https://lnkd.in/gfeiCRef. This innovative gain chip offers exceptional performance and reliability, catering to the needs of cutting-edge optical systems. Key features of the new gain chip include: ▪️ Wavelength Tuning Range: 830–860nm, allowing flexibility for various applications. ▪️Output Power: Up to 50mW in an external cavity configuration, ensuring robust performance. This development underscores our commitment to meeting evolving industry requirements with high-quality, precision-engineered products. The new gain chip is ideal for applications in spectroscopy, optical sensing, and advanced communication systems. For more details or inquiries, please contact our team.

Innolume at SPIE Photonics West 2025 From January 28 to 30, 2025, Innolume will participate in the leading optical technologies exhibition — SPIE Photonics West Exhibition, held at the Moscone Center in San Francisco. We invite you to visit us at booth #4324. At our booth, you will have the opportunity to explore the specifications and key features of our showcased products, including: ·        High-power DFB Laser; ·        Narrow-line DFB; ·        Ultra low-noise SOA; ·        High-power BOA. You can also learn about our latest developments, explore collaboration opportunities, and discuss your projects with Innolume experts, as well as get additional information about our other products such as SLD, Gain Chips, Fabry-Perot laser diodes, FBG and Broad-area lasers. Event Details: Dates: January 28–30, 2025 Location: The Moscone Center, 747 Howard St, San Francisco, CA, USA Our Booth: #4324 We look forward to seeing you there! If you’d like to learn more, please feel free to contact us in any convenient way. See you at SPIE Photonics West 2025! #Innolume #SPIEPhotonicsWest2025 #PhotonicsWest #OpticalTechnologies #HighPowerDFBLaser #NarrowLineDFB #LowNoiseSOA #HighPowerBOA